drift region

基本解释

A unified breakdown model of SOI RESURF device with uniform, step, or linear drift region doping profile is firstly proposed.
提出了一个均匀、阶梯和线性掺杂漂移区SOI高压器件的统一击穿模型。
The results show that the step doping drift region structure achieves a higher breakdown voltage, lower specific on-resistance and larger process tolerance.
研究表明，阶梯变掺杂漂移区结构能明显改善表面电场分布，提高耐压，降低导通电阻，增大工艺容差；
The results show that for the double-reentrant cavity with regular drift region, this method is superior to the others in higher accuracy and less computing time.
结果表明对于漂移咀规则的重入腔，采用分区场匹配的经典方法仍有明显的优点，它既可以保证很高的精度，又只需要很少的计算量。