high resolution transmission electron microscopy

基本解释

High resolution transmission electron microscopy(HRTEM) and x-ray diffraction analysis (XRD) were used to characterize the morphologies and micro-structures of the products.
用高分辨透射电子显微镜（HRTEM）、X射线衍射仪（XRD）对产物进行表征。
Using high resolution transmission electron microscopy, nanometer Si particles and nanometer Ge particles were observed in the SSO and GSO films, respectively, after annealing at 900 or 1100℃.
使用高分辨透射电子显微镜可以观察到经90 0和110 0℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒，和经90 0和110 0℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒。
X ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) are used to analyze the synthesized GaN nanorods.
用X射线衍射（XRD）、扫描电镜（SEM）、高分辨率透射电镜（HRTEM）和光致发光光谱（PL）对生成的产物进行了分析。