nanocrystalline silicon films

基本解释

B and P doped hydrogenated nanocrystalline silicon films (nc Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD).
采用等离子增强化学气相沉积（PECVD）方法成功的沉积出掺杂（主要是磷、硼）纳米硅薄膜。
In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
采用脉冲激光烧蚀技术在氩气环境下制备了纳米硅薄膜，研究了环境气体压强对纳米硅薄膜表面形貌的影响。
Nanocrystalline silicon films have special structure and many excellent optoelectronic properties, and are supposed to be applied in optoelectronic devices and large scale integrated circuits.
纳米硅薄膜具有独特的结构和许多优异的光电性能，可望应用于新型光电器件、大规模集成电路等领域。