sheet resistance

基本解释

Of all these factors, the implantation dose has the most significant influence on mobility and sheet resistance.
在这些关系中，注入剂量对迁移率及薄层电阻有最主要的影响。
The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。
In this article, we drive the equations of measuring resistivity and surface sheet resistance, taking into account the contact dimension and putting the location of the four probes arbitrary.
本文考虑到接触面积大小的影响，并让四根探针排列成任意形状，导出了测量电阻率和薄层电阻的关系式。

方块电阻
方电阻
The minimum of sheet resistance is about 110 Ω,the minimum specific resistance of can reach 1.65 X 10-2 Ω·cm.
经5次镀膜后的ITO薄膜方电阻可达110Ω／，电阻率为1.65×10-2Ω·cm。
方阻
Sheet resistance, transmittance and refractive index were as function of IR irradiation temperature （TIR）.
溅射时红外辐射温度TIR对薄膜方阻、薄膜透射率和折射率有重要影响。
薄层电阻
片电阻
薄片电阻

薄层电阻
In this paper,the circuit used for testing sheet resistance is designed using single chip processor.
本文还利用单片机系统设计了薄层电阻测试电路，对于程序中用到的范德堡隐函数，利用非线性反演和规范化拟合的方法推导出其多项式显函数形式。
表单电阻