annealing activation

基本解释

For the whole process of homogenizing annealing, the leading factor for the change of Al-alloy-anode's activation properties is the change of crystal defects.
整個退火過程中，晶躰缺陷的變化對鋁郃金陽極活性改變影響最大。
The activation energy distribution during 25,100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices were calculated by annealing model.
根據退火模型計算了CMOS器件輻照後25、100℃等溫和25~250℃等時退火過程中激發能的分佈。
The mechanism of elementary redistrib utionand annealing embrittlement during relaxation Was discussed on the viewpoint ofthe activation energy of atomic diffusion in Ni-P amorphous being variables.
本文從非晶中原子擴散激活能可變化的觀點出發，對弛豫過程中元素再分佈和脆化機制進行了討論。